pd84010-e授权代理商特价
- 型 号：
- pd84010-e授权代理商特价
- 订货量：
- (pcs)：>=5632
- 发货地点：
- 广东省/深圳
- 产品类别：
- 压电晶体、频率元件
- 更新时间：
- 2018/8/30 16:31:46
商品详情
pd84010-e features
excellent thermal stability
common source configuration
pout = 10 w with 14.3 db gain @ 870 mhz /
7.5 v
plastic package
esd protection
in compliance with the 2002/95/ec european
directive
description
the pd84010-e is a common source n-channel,
enhancement-mode lateral field-effect rf power
transistor. it is designed for high gain, broadband
commercial and industrial applications. it
operates at 7.5 v in common source mode at
frequencies of up to 1 ghz. pd84010-e boasts
the excellent gain, linearity and reliability of st’s
latest ldmos technology mounted in the first true
smd plastic rf power package, powerso-10rf.
pd84010-e’s superior linearity performance
makes it an ideal solution for portable radio
applications.
制造商: stmicroelectronics
产品种类: 射频金属氧化物半导体场效应(rf mosfet)晶体管
晶体管极性: n-channel
id-连续漏极电流: 8 a
vds-漏源极击穿电压: 40 v
技术: si
增益: 14.3 db
输出功率: 10 w
最小工作温度: - 65 c
最大工作温度: 150 c
安装风格: smd/smt
封装: tube
配置: single
高度: 3.5 mm
长度: 7.5 mm
工作频率: 1 ghz
类型: rf power mosfet
宽度: 9.4 mm
商标: stmicroelectronics
通道模式: enhancement
pd-功率耗散: 95 w
工厂包装数量: 400
vgs - 栅极-源极电压: 15 v
the powerso-10 plastic package, designed to
offer high reliability, is the first st jedec
approved, high power smd package. it has been
specially optimized for rf needs and offers
excellent rf performances and ease of assembly.
pd84010-e powerso-10rf (formed lead)
pd84010tr-e powerso-10rf (formed lead)
pd84010str-e powerso-10rf (straight lead)
